RF-GaN PA Module for 5G Base Station

Novotna Technology Corporation Japan (NTCJ) provides RF-GaN products are highly integrated PA modules with driver amplifier, Doherty amplifier and 50 Ω input and output matching.  These products greatly contribute to the miniaturization and high performance of 5G base transceiver station.

  • Features
    Operating Frequency Range: N77/ N78/ N79 
    -
    Operating Drain Voltage (GaN): 28 V
    -
    50 Ω input/ output
    -
    Integrated Doherty circuit and bias circuit
    -
    Gain at 8 W avg.: 26 dB
    -
    Line up efficiency at  8 W avg.: 33%
    -
    Doherty efficiency at 8 W avg.: 40%
    -
    12 x 8 mm plastic surface mount package
  • Specifications

    Room Temperature (Ta) = 25 ± 5 °C,

    Vbias = 5 V, Ven = 1.8 V, Vds-D = Vds-CA = Vds-PA = 28 V, Vgg = -7.5V, Vgs-PA*2 = -3.7V

    Freq. = 4900 MHz, In Nuvoton Test Fixture, 50 Ω system

     
  • System Block Diagram
RF-GaN PA Module for 5G base station-1 RF-GaN PA Module for 5G base station-2


This website uses cookies to ensure you get the best experience on our website. Learn more
OK